{"id":8617,"date":"2024-02-22T07:19:24","date_gmt":"2024-02-22T07:19:24","guid":{"rendered":"https:\/\/memsolar.com\/?p=8617"},"modified":"2024-02-22T07:19:26","modified_gmt":"2024-02-22T07:19:26","slug":"topcon","status":"publish","type":"post","link":"http:\/\/memsolar.com\/tr\/blog\/topcon\/","title":{"rendered":"G\u00fcn\u00fcm\u00fcz Fotovoltaik G\u00fcne\u015f Paneli \u00dcretiminde Yeni H\u00fccre Teknolojileri"},"content":{"rendered":"\n

<\/a><\/p>\n\n\n

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\"\"<\/figure><\/div>\n\n\n

D\u00fcnya Fotovoltaik (FV) g\u00fcne\u015f paneli \u00fcretiminde ~%98 pazar pay\u0131na sahip olan kristal silisyum dilim (wafer) tabanl\u0131 teknoloji ile \u00fcretilen g\u00fcne\u015f h\u00fccrelerinin verimleri, silisyum yar\u0131-iletkeninin verim limitlerine yakla\u015ft\u0131k\u00e7a, \u00fcreticiler daha d\u00fc\u015f\u00fck maliyet ile daha y\u00fcksek verime ula\u015fabilmek amac\u0131yla kullan\u0131lan dilim boyutlar\u0131, kullan\u0131lan dilimlerin katk\u0131lanma t\u00fcr\u00fc ve h\u00fccre mimarisi olmak \u00fczere bir\u00e7ok radikal de\u011fi\u015fikli\u011fe gitmek zorunda kalm\u0131\u015ft\u0131r.<\/p>\n\n\n\n

Bu de\u011fi\u015fimlerden ilki; ge\u00e7ti\u011fimiz y\u0131llarda standart olan M6 (166mm) dilim boyutunun h\u0131zla yerini M10 (182mm) boyutuna b\u0131rakmas\u0131d\u0131r. B\u00fcy\u00fck entegre \u00fcreticiler i\u00e7in G12 ve G12R (210 ve 210 dikd\u00f6rtgen) boyutlar\u0131n\u0131n da k\u0131sa s\u00fcre i\u00e7erisinde standartla\u015fmas\u0131 beklenmektedir.<\/p>\n\n\n\n

\u0130kincisi ise benzer \u015fekilde ge\u00e7ti\u011fimiz 5 y\u0131l i\u00e7erisinde pozitif y\u00fck ta\u015f\u0131y\u0131c\u0131lara sahip p-tipi bor katk\u0131l\u0131 dilimlerden tamamen p-tipi galyum katk\u0131l\u0131 dilimlere ge\u00e7ilmesidir; bor katk\u0131l\u0131 h\u00fccreler zaman i\u00e7erisinde verim kayb\u0131na neden olan bor-oksijen tipi kristal hatalar\u0131na sahiptir. G\u00fcn\u00fcm\u00fczde ise p-tipi katk\u0131l\u0131 dilimlerden fosfor katk\u0131l\u0131 n-tipi (negatif y\u00fck ta\u015f\u0131y\u0131c\u0131l\u0131) dilimlerin kullan\u0131m\u0131na ge\u00e7i\u015f s\u00fcreci yine b\u00fcy\u00fck bir h\u0131zla ger\u00e7ekle\u015fmektedir.<\/p>\n\n\n\n

Son olarak h\u00fccre mimarisinde ise pozitif ve negatif kutuplar\u0131n h\u00fccrenin \u00f6n ve arka y\u00fczeyinde bulundu\u011fu \u00abiki tarafl\u0131 kontak yap\u0131s\u0131na sahip h\u00fccrelerden\u00bb her iki polariteye sahip kontaklar\u0131n da arka y\u00fczeyde bulundu\u011fu \u00abarkadan kontak (XBC)\u00bb teknolojisine ge\u00e7i\u015fin orta vadede ger\u00e7ekle\u015fmesi beklenmektedir.<\/p>\n\n\n\n

G\u00fcn\u00fcm\u00fczde ya\u015fad\u0131\u011f\u0131m\u0131z bu de\u011fi\u015fikliklerin en \u00f6nemlilerinden biri olan dilim katk\u0131lama t\u00fcr\u00fcn\u00fcn p-tipinden n-tipine ge\u00e7i\u015fi, yar\u0131-iletken kristaller i\u00e7erisinde bulunan y\u00fck ta\u015f\u0131y\u0131c\u0131lar\u0131n y\u00fck \u00f6m\u00fcrlerinin (lifetime) artmas\u0131n\u0131 sa\u011flayarak birim alandan daha y\u00fcksek voltaj ve ak\u0131m toplanmas\u0131n\u0131 \u2013 h\u00fccrelerin daha verimli hale gelmesini sa\u011flam\u0131\u015ft\u0131r. P-tipinden n-tipine ge\u00e7i\u015fte, standart teknoloji olan p-PERC mimarisi geride b\u0131rak\u0131larak, n-tipi TOPCon mimarisine ge\u00e7ilmi\u015ftir. TOPCon yap\u0131da, PERC h\u00fccrelerde arka y\u00fczeyde lazer ile a\u00e7\u0131lan kontak noktalar\u0131nda olu\u015fan y\u00fck \u00f6mr\u00fcndeki d\u00fc\u015f\u00fc\u015f, birka\u00e7 nanometre kal\u0131nl\u0131\u011f\u0131 ge\u00e7meyen oksit tabakalarda olu\u015fan kuantum mekanik t\u00fcnelleme y\u00f6ntemi ile s\u0131f\u0131ra indirilerek h\u00fccrenin a\u00e7\u0131k devre voltaj\u0131n\u0131n artmas\u0131 sa\u011flanm\u0131\u015ft\u0131r. Zaten TOPCon (T<\/strong>unnellin O<\/strong>xide P<\/strong>assivating Con<\/strong>tacts) ismi de \u201ct\u00fcnelleme oksiti ile pasivasyonu sa\u011flanan kontaklar\u201d \u015feklinde terc\u00fcme edilebilir.<\/p>\n\n\n

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PERC ve TOPCon h\u00fccre kar\u015f\u0131la\u015ft\u0131rmas\u0131.<\/figcaption><\/figure><\/div>\n\n\n

TOPCon h\u00fccrelerin PERC h\u00fccreler ile k\u0131yasland\u0131\u011f\u0131nda daha y\u00fcksek verim de\u011ferlerine ula\u015fmalar\u0131, y\u00fcksek y\u00fck \u00f6mr\u00fcne sahip n-tipi dilimleri kullanmalar\u0131 ve arka y\u00fczeyde kullan\u0131lan kontak mimarisinin y\u00fck \u00f6mr\u00fcn\u00fc art\u0131rmas\u0131 sonucunda ortaya \u00e7\u0131karken; \u00f6n y\u00fczeylerinde p-n ekleminin (diyot yap\u0131s\u0131) olu\u015fturulmas\u0131nda kullan\u0131lan bor katk\u0131lama i\u015fleminin parazitik \u0131\u015f\u0131k apsorbsiyonun y\u00fcksek miktarda olmas\u0131, \u00f6n y\u00fczey katk\u0131laman\u0131n miktar\u0131n\u0131n d\u00fc\u015f\u00fck tutulmas\u0131n\u0131 gerektirmekte, bu da daha s\u0131k \u00f6n y\u00fczey finger ve buna ba\u011fl\u0131 daha fazla busbar yerle\u015fimi ihtiyac\u0131n\u0131 ortaya \u00e7\u0131kmaktad\u0131r. Bunun sonucunda da end\u00fcstriyel TOPCon h\u00fccrelerin \u00e7ok b\u00fcy\u00fck bir b\u00f6l\u00fcm\u00fcn\u00fcn (en y\u00fcksek verime sahip olanlar) 16 busbar yap\u0131s\u0131nda oldu\u011fu bilinmektedir.<\/p>\n\n\n\n

    \n
  • Arka y\u00fczeyden ald\u0131\u011f\u0131 \u0131\u015f\u0131\u011f\u0131 PERC teknolojisinden daha verimli bi\u00e7imde enerjiye \u00e7evirebilmeleri ile saha tipi kurulumlarda enerji \u00fcretimi art\u0131rmalar\u0131.<\/li>\n\n\n\n
  • Y\u0131llar i\u00e7inde daha az verim kayb\u0131 ya\u015fayarak santral veriminin devaml\u0131l\u0131\u011f\u0131n\u0131 sa\u011flamalar\u0131.<\/li>\n\n\n\n
  • Y\u00fcksek y\u00fck \u00f6m\u00fcrleri sayesinde daha d\u00fc\u015f\u00fck s\u0131cakl\u0131k katsay\u0131lar\u0131na sahip olduklar\u0131 i\u00e7in s\u0131cakl\u0131k kaynakl\u0131 kay\u0131plardan daha az etkilenmeleri.<\/li>\n\n\n\n
  • D\u00fc\u015f\u00fck \u0131\u015f\u0131ma performanslar\u0131n\u0131n daha iyi olmas\u0131.<\/li>\n<\/ul>\n\n\n\n

    Nedenlerinden \u00f6t\u00fcr\u00fc TOPCon teknolojisinin PERC teknolojisinin yerini k\u0131sa s\u00fcre i\u00e7inde almas\u0131 ka\u00e7\u0131n\u0131lmazd\u0131r. Panel \u00fcretiminde busbar say\u0131s\u0131n\u0131n art\u0131r\u0131lmas\u0131 ve do\u011fru enkaps\u00fclan kombinasyonlar\u0131n\u0131n kullan\u0131lmas\u0131 ile standart bir mod\u00fcl hatt\u0131nda kolayca \u00fcretilebilir olmalar\u0131; h\u00fccre \u00fcretiminde ise standart \u00fcretim hatt\u0131na eklenecek 3 ek a\u015fama ile teknoloji de\u011fi\u015fiminin yap\u0131labilmesi, TOPCon teknolojisinin yay\u0131l\u0131m\u0131n\u0131 destekleyen avantajlar\u0131d\u0131r. T\u00fcm bunlar de\u011ferlendirildi\u011finde, daha y\u00fcksek verimli ve daha \u00f6ng\u00f6r\u00fclebilir, stabil bir enerji \u00fcretimi i\u00e7in PERC yerine TOPCon panellerin tercih edilmesi do\u011fru se\u00e7im olacakt\u0131r. Tabii ki do\u011fru enkaps\u00fclan tercihleri ile, \u00e7\u00fcnk\u00fc TOPCon h\u00fccrelerin nem hassasiyetleri PERC h\u00fccrelere k\u0131yasla daha fazlad\u0131r ve nem ge\u00e7irgenli\u011fi d\u00fc\u015f\u00fck Cam\/Cam konfig\u00fcrasyonlar veya d\u00fc\u015f\u00fck ge\u00e7irgenlikli Backsheet se\u00e7imleri ile panel haline getirilmelidirler.<\/p>\n","protected":false},"excerpt":{"rendered":"

    D\u00fcnya Fotovoltaik (FV) g\u00fcne\u015f paneli \u00fcretiminde ~%98 pazar pay\u0131na sahip olan kristal silisyum dilim (wafer) tabanl\u0131 teknoloji ile \u00fcretilen g\u00fcne\u015f h\u00fccrelerinin verimleri, silisyum yar\u0131-iletkeninin verim limitlerine yakla\u015ft\u0131k\u00e7a, \u00fcreticiler daha d\u00fc\u015f\u00fck maliyet ile daha y\u00fcksek verime ula\u015fabilmek amac\u0131yla kullan\u0131lan dilim boyutlar\u0131, kullan\u0131lan dilimlerin katk\u0131lanma t\u00fcr\u00fc ve h\u00fccre mimarisi olmak \u00fczere bir\u00e7ok radikal de\u011fi\u015fikli\u011fe gitmek zorunda kalm\u0131\u015ft\u0131r. 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